480 Gbps WDM Transmission Through an Al₂O₃:Er³⁺ Waveguide Amplifier

The increasing need for more efficient communication networks has been the main driving force development of complex photonic integration circuits combining active and passive building blocks towards advanced functionality. However, this perpetual effort comes with cost additive power losses research community resorted to investigation different materials establish on-chip amplification. Among proposals, erbium-doped waveguide amplifiers appear be a promising solution high performance transmission in C-band band low fabrication cost, due their CMOS compatibility potential silicon\silicon nitride platforms. In paper we provide holistic study high-speed WDM capabilities monolithically integrated Al2O3:Er3+ spiral amplifier co-integrated Si3N4 components, providing static characterization dynamic evaluation (a) 4 × 40 Gbps, (b) 8 Gbps (c) 8×60 transmissions achieving clearly open eye diagram all cases. region erbium doped consists 5.9 cm adiabatically coupled waveguides combined on chip 980 nm/1550 nm Multiplexers/Demultiplexers. Experimental results reveal bit-error rate values below KR4-FEC limit 2×10-5 channels, without any DSP applied transmitter or receiver side 4×40 8×40 data stream transmission.